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BU2727DF Datasheet(PDF) 2 Page - Savantic, Inc.

Part # BU2727DF
Description  Silicon NPN Power Transistors
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Manufacturer  SAVANTIC [Savantic, Inc.]
Direct Link  http://www.svntc.com
Logo SAVANTIC - Savantic, Inc.

BU2727DF Datasheet(HTML) 2 Page - Savantic, Inc.

  BU2727DF Datasheet HTML 1Page - Savantic, Inc. BU2727DF Datasheet HTML 2Page - Savantic, Inc. BU2727DF Datasheet HTML 3Page - Savantic, Inc.  
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SavantIC Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BU2727DF
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
825
V
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.91A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=0.91A
1.0
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
110
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
6
hFE-2
DC current gain
IC=5A ; VCE=1V
5.5
11
VF
Diode forward voltage
IF=7A
2.2
V


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