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L74VHC1G01 Datasheet(PDF) 1 Page - Leshan Radio Company

Part # L74VHC1G01
Description  2-Input NAND Gate with Open Drain Output
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

L74VHC1G01 Datasheet(HTML) 1 Page - Leshan Radio Company

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LESHAN RADIO COMPANY, LTD.
V0d
L74VHC1G01
V0d
1
3
2
4
5
TSOP–5/SOT–23/SC–59
DT SUFFIX
The L74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level.
This allows the L74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external
resistor and power supply.
The L74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
SC–88A / SOT–353/SC–70
DF SUFFIX
1
3
2
4
5
MARKING DIAGRAMS
Pin 1
d = Date Code
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5V CC
FUNCTION TABLE
Inputs
Output
AB
Y
LL
Z
LH
Z
HL
Z
HH
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
2–Input NAND Gate with
Open Drain Output
1/6


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