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CM50MX-24A Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM50MX-24A Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 8 page ![]() Jan. 2009 2 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25 °C, unless otherwise specified) INVERTER PART Symbol Parameter Conditions Rating Unit VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Emitter current (Free wheeling diode forward current) G-E Short C-E Short DC, TC = 97 °C Pulse TC = 25 °C TC = 25 °C Pulse 1200 ±20 50 100 355 50 100 V A W A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) BRAKE PART Rating Unit VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, TC = 106 °C Pulse TC = 25 °C TC = 25 °C Pulse 1200 ±20 30 60 260 1200 30 60 V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Symbol Parameter Conditions CONVERTER PART Rating Unit VRRM Ea IO IFSM I2t Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge forward current Current square time 3-phase full wave rectifying, TC = 141 °C The sine half wave 1 cycle peak value, f = 60Hz, non-repetitive Value for one cycle of surge current 1600 440 50 500 1040 V Vrms A A2S (Note. 1) Symbol Parameter Conditions MODULE Rating Unit Tj Tstg Viso Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Weight Terminals to base plate, f = 60Hz, AC for 1 minute On the centerline X, Y Mounting M5 screw (Typical) –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 270 °C Vrms μm N·m g Note. 8: The base plate flatness measurement points are in the following figure. — — — (Note. 8) Symbol Parameter Conditions X Y – + Heat sink side +:convex – :concave |
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