ATtiny261-ESSZ datasheet(179/227 Pages) ATMEL

179 / 227 page

179

7753C–AVR–07/09

ATtiny261/ATtiny461/ATtiny861

Figure 22-3. Programming the Flash Waveforms(1)

Note:

1. “XX” is don’t care. The letters refer to the programming description above.

22.8.5

Programming the EEPROM

The EEPROM is organized in pages, see Table 22-8 on page 174. When programming the

EEPROM, the program data is latched into a page buffer. This allows one page of data to be

programmed simultaneously. The programming algorithm for the EEPROM data memory is as

follows (refer to “Programming the Flash” on page 177 for details on Command, Address and

Data loading):

A: Load Command “0001 0001”.

G: Load Address High Byte (0x00 - 0xFF).

B: Load Address Low Byte (0x00 - 0xFF).

C: Load Data (0x00 - 0xFF).

E: Latch data (give PAGEL a positive pulse).

K: Repeat 3 through 5 until the entire buffer is filled.

L: Program EEPROM page

Set BS to “0”.

Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY

goes low.

Wait until to RDY/BSY goes high before programming the next page (See Figure 22-4 for

signal waveforms).

RDY/BSY

RESET +12V

0x10

ADDR. LOW

ADDR. HIGH

DATA

DATA LOW

DATA HIGH

ADDR. LOW

DATA LOW

DATA HIGH

XA1/BS2

XA0

PAGEL/BS1

XTAL1

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