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AS5140H Datasheet(PDF) 8 Page - ams AG |
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AS5140H Datasheet(HTML) 8 Page - ams AG |
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8 / 37 page  www.austriamicrosystems.com/AS5140H Revision 1.4 8 - 37 AS5140H Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6.2 Magnetic Input Specification 6.3 Electrical System Specifications VOL Low level output voltage VSS+0.4 V IO Output current VDD5V:4.5V 4 mA VDD5V:3V 2 Table 9. Tristate CMOS Output: DO Symbol Parameter Conditions Min Typ Max Units VOH High level output voltage VDD5V- 0.5 V VOL Low level output voltage VSS+0.4 V IO Output current VDD5V:4.5V 4 mA VDD5V:3V 2 IOZ Tri-state leakage current 1 µA Table 10. Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units Magnetic Input Specification (Two-pole cylindrical diametrically magnetized source) dmag Diameter Recommended magnet: Ø 6mm x 2.5mm for cylindrical magnets 46 mm tmag Thickness 2.5 Bpk Magnetic input field amplitude Required vertical component of the magnetic field strength on the die’s surface, measured along a concentric circle with a radius of 1.1mm 45 75 mT Boff Magnetic offset Constant magnetic stray field ±10 mT Field non-linearity Including offset gradient 5 % fmag_abs Input frequency (rotational speed of magnet) Absolute mode: 600 rpm @ readout of 1024 positions (see Table 19) 10 Hz fmag_inc Incremental mode: no missing pulses at rotational speeds of up to 10.000 rpm (see Table 19) 166 Hz Disp Displacement Radius Max. X-Y offset between defined IC package center and magnet axis (see Figure 19) 0.25 mm Max. X-Y offset between chip center and magnet axis 0.485 Chip placement tolerance Placement tolerance of chip within IC package (see Figure 21) ±0.235 mm Recommended magnet material and temperature drift NdFeB (Neodymium Iron Boron) -0.12 %/K SmCo (Samarium Cobalt) -0.035 Table 11. Electrical System Specifications Symbol Parameter Conditions Min Typ Max Units RES Resolution 1 0.352 deg 10 bit Table 8. CMOS Output: A, B, Index, PWM (Continued) Symbol Parameter Conditions Min Typ Max Units |
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