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PIC16F616-I/ML Datasheet(PDF) 150 Page - Microchip Technology |
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PIC16F616-I/ML Datasheet(HTML) 150 Page - Microchip Technology |
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150 / 214 page ![]() PIC16F610/616/16HV610/616 DS41288F-page 150 © 2009 Microchip Technology Inc. 15.5 DC Characteristics: PIC16F610/616-E (Extended) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +125°C for extended Param No. Device Characteristics Min Typ† Max Units Conditions VDD Note D020E Power-down Base Current (IPD)(2) PIC16F610/616 — 0.05 4.0 μA 2.0 WDT, BOR, Comparators, VREF and T1OSC disabled — 0.15 5.0 μA3.0 — 0.35 8.5 μA5.0 D021E — 0.5 5.0 μA 2.0 WDT Current(1) —2.5 8.0 μA3.0 —9.5 19 μA5.0 D022E — 5.0 15 μA 3.0 BOR Current(1) —6.0 19 μA5.0 D023E — 105 130 μA 2.0 Comparator Current(1), both comparators enabled —110 140 μA3.0 —116 150 μA5.0 D024E — 50 70 μA 2.0 Comparator Current(1), single comparator enabled —55 75 μA3.0 —60 80 μA5.0 D025E — 30 40 μA2.0 CVREF Current(1) (high range) —45 60 μA3.0 —75 105 μA5.0 D026E* — 39 50 μA2.0 CVREF Current(1) (low range) —59 80 μA3.0 —98 130 μA5.0 D027E — 5.5 16 μA 2.0 T1OSC Current(1), 32.768 kHz —7.0 18 μA3.0 —8.5 22 μA5.0 D028E — 0.2 6.5 μA 3.0 A/D Current(1), no conversion in progress —0.36 10 μA5.0 * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. |
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