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C8051F50X Datasheet(PDF) 47 Page - Silicon Laboratories |
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C8051F50X Datasheet(HTML) 47 Page - Silicon Laboratories |
47 / 312 page Rev. 1.1 47 C8051F50x-F51x Figure 5.2. Typical Internal High-Frequency Oscillator Over Temperature Table 5.6. Internal High-Frequency Oscillator Electrical Characteristics VDD = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified; Using factory-calibrated settings. Parameter Conditions Min Typ Max Units Oscillator Frequency IFCN = 111b; 24 – 0.5% 241 24 + 0.5% MHz Oscillator Supply Current (from VDD) Internal Oscillator On OSCICN[7:6] = 11b — 830 1300 µA Internal Oscillator Suspend OSCICN[7:6] = 00b ZTCEN = 1 Temp = 25 °C Temp = 85 °C Temp = 125 °C — — — 66 110 190 — — — µA Wake-up Time From Suspend OSCICN[7:6] = 00b — 1 — µs Power Supply Sensitivity Constant Temperature — 0.10 — %/V Temperature Sensitivity2 Constant Supply TC1 TC2 — — 5.0 –0.65 — — ppm/°C ppm/°C2 1. This is the average frequency across the operating temperature range 2. Use temperature coefficients TC1 and TC2 to calculate the new internal oscillator frequency using the following equation: f(T) = f0 * (1 + TC1*(T - T0) + TC2*(T - T0) 2) where f0 is the internal oscillator frequency at 25 °C and T0 is 25 °C. |
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