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BSB014N04LX3G Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BSB014N04LX3G Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 11 page BSB014N04LX3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 V DS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] 0 10 20 30 40 50 60 70 80 90 100 0 40 80 120 160 T C [°C] 0 40 80 120 160 200 0 40 80 120 160 T C [°C] Rev. 2.0 page 4 2009-05-11 |
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