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BSB014N04LX3G Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BSB014N04LX3G Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 11 page  BSB014N04LX3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 0 1 2 3 4 5 6 0 1020 3040 50 I D [A] 25 °C 150 °C 0 80 160 240 320 400 012 345 V GS [V] 0 40 80 120 160 200 240 280 320 360 400 0 40 80 120 160 I D [A] 2.8 V 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 0 80 160 240 320 400 480 560 640 720 800 01 23 V DS [V] Rev. 2.0 page 5 2009-05-11 |
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