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BSB014N04LX3G Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSB014N04LX3G Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 11 page BSB014N04LX3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 20 25 30 35 40 45 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 1 10 100 1 10 100 1000 t AV [µs] 8 V 20 V 32 V 0 2 4 6 8 10 12 0 40 80 120 160 Q gate [nC] Rev. 2.0 page 7 2009-05-11 |
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