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BSB014N04LX3G Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSB014N04LX3G
Description  OptiMOS3 Power-MOSFET
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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BSB014N04LX3 G
OptiMOSTM3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM)
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package MX footprint and outline
1)
• Qualified according to JEDEC
2) for target applications
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
V GS=10 V, T C=25 °C
180
A
V GS=10 V, T C=100 °C
128
V GS=10 V, T A=25 °C,
R thJA=45 K/W
2)
36
Pulsed drain current
3)
I D,pulse
T C=25 °C
400
Avalanche current, single pulse
4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
260
mJ
Gate source voltage
V GS
±20
V
4) See figure 13 for more detailed information
Value
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
V DS
40
V
R DS(on),max
1.4
m
I D
180
A
Product Summary
Type
Package
Outline
Marking
BSB014N04LX3 G
MG-WDSON-2
MX
0104
CanPAK
TM M
MG-WDSON-2
Rev. 2.0
page 1
2009-05-11


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