BSF024N03LT3G datasheet(1/11 Pages) INFINEON

Part #	BSF024N03LT3G

Description	OptiMOS3 Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSF024N03LT3 G

OptiMOSTM3 Power-MOSFET

Features

• Optimized for high switching frequency DC/DC converter

• Very low on-resistance R DS(on)

• Excellent gate charge x R DS(on) product (FOM)

• Low parasitic inductance

• Low profile (<0.7 mm)

• 100% avalanche tested

• 100% Rg Tested

• Double-sided cooling

• Pb-free plating; RoHS compliant

• Compatible with DirectFET® package ST footprint and outline

1)

• Qualified according to JEDEC

2) for target applications

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

106

A

V GS=10 V, T C=100 °C

67

V GS=10 V, T A=25 °C,

R thJA=58 K/W

2)

15

Pulsed drain current

3)

I D,pulse

T C=25 °C

400

Avalanche current, single pulse

4)

I AS

T C=25 °C

40

Avalanche energy, single pulse

E AS

I D=40 A, R GS=25 Ω

125

mJ

Gate source voltage

V GS

±20

V

4) See figure 13 for more detailed information

Value

1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered

trademark of International Rectifier Corporation.

2) J-STD20 and JESD22

3) See figure 3 for more detailed information

V DS

30

V

R DS(on),max

2.4

m

Ω

I D

106

A

Product Summary

Type

Package

Outline

Marking

BSF024N03LT3 G

MG-WDSON-2

ST

0703

CanPAK

TM S

MG-WDSON-2

Rev. 2.0

page 1

2009-06-16

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