BSO052N03S datasheet(3/9 Pages) INFINEON

Part #	BSO052N03S

Description	OptiMOS?? Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSO052N03S

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

4160

5530

pF

Output capacitance

C oss

-

1480

1970

Reverse transfer capacitance

C rss

-

190

280

Turn-on delay time

t d(on)

-

9.7

15

ns

Rise time

t r

-

7.4

11

Turn-off delay time

t d(off)

-40

60

Fall time

t f

-

6.2

9.3

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-11

15

nC

Gate charge at threshold

Q g(th)

-

6.6

8.8

Gate to drain charge

Q gd

-

7.5

11

Switching charge

Q sw

-12

17

Gate charge total

Q g

-32

43

Gate plateau voltage

V plateau

-

2.7

-

V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-28

37

nC

Output charge

Q oss

V DD=15 V, V GS=0 V

-35

47

Reverse Diode

Diode continous forward current

I S

-

2.5

A

Diode pulse current

I S,pulse

--

68

Diode forward voltage

V SD

V GS=0 V, I F=2.5 A,

T j=25 °C

-

0.72

1

Reverse recovery charge

Qrr

V R=15 V, I F=I S,

di F/dt =400 A/µs

--

15

4) See figure 16 for gate charge parameter definition

T A=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=8.5 A, R G=2.7 Ω

V DD=15 V, I D=8.5 A,

V GS=0 to 5 V

Rev. 2.0

page 3

2009-11-04

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