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BSO052N03S Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSO052N03S Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page BSO052N03S 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=17 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 0 1 2 3 4 5 6 7 8 9 10 -60 -20 20 60 100 140 180 T j [°C] 70 µA 700 µA 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 10 4 10 3 10 2 100 1000 10000 0 5 10 15 20 25 30 V DS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98 % 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD [V] Rev. 2.0 page 6 2009-11-04 |
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