2SA1892

2006-11-09

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1892

Power Amplifier Applications

Power Switching Applications

• Complementary to 2SC5029

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−3

A

Base current

−0.2

A

Collector power dissipation

1.3

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8M1A

Weight: 0.55 g (typ.)