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2SC4409 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC4409 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC4409 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A Collector power dissipation PC 500 mW Collector power dissipation PC (Note) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: 2SC4409 mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
Similar Part No. - 2SC4409_04 |
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Similar Description - 2SC4409_04 |
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