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CY62126EV30 Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62126EV30 Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 16 page CY62126EV30 MoBL Document #: 38-05486 Rev. *H Page 9 of 16 Figure 7. Write Cycle No. 1 (WE controlled)[19, 20, 21] Figure 8. Write Cycle No. 2 (CE controlled) [19, 20, 21] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tWC tHZOE DATAIN NOTE 22 tBW tSCE DATA I/O ADDRESS CE WE OE BHE/BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN tBW tSA CE ADDRESS WE DATA I/O OE BHE/BLE NOTE 22 Notes 19. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write. 20. Data I/O is high impedance if OE = VIH. 21. If CE goes high simultaneously with WE = VIH, the output remains in a high impedance state. 22. During this period, the I/Os are in output state. Do not apply input signals. |
Similar Part No. - CY62126EV30_10 |
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Similar Description - CY62126EV30_10 |
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