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CY62126EV30LL-45ZSXA Datasheet(PDF) 7 Page - Cypress Semiconductor |
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CY62126EV30LL-45ZSXA Datasheet(HTML) 7 Page - Cypress Semiconductor |
7 / 16 page CY62126EV30 MoBL Document #: 38-05486 Rev. *H Page 7 of 16 Switching Characteristics Over the Operating Range [11, 12] Parameter Description 45 ns (Industrial) 55 ns (Automotive) Unit Min Max Min Max Read Cycle tRC Read cycle time 45 – 55 – ns tAA Address to data valid – 45 – 55 ns tOHA Data hold from address change 10 – 10 – ns tACE CE LOW to data valid – 45 – 55 ns tDOE OE LOW to data valid – 22 – 25 ns tLZOE OE LOW to Low Z [13] 5 – 5 – ns tHZOE OE HIGH to High Z [13, 14] – 18 – 20 ns tLZCE CE LOW to Low Z [13] 10 – 10 – ns tHZCE CE HIGH to High Z [13, 14] – 18 – 20 ns tPU CE LOW to power up 0 – 0 – ns tPD CE HIGH to power down – 45 – 55 ns tDBE BHE / BLE LOW to data valid – 22 – 25 ns tLZBE BHE / BLE LOW to Low Z [13] 5 – 5 – ns tHZBE BHE / BLE HIGH to High Z [13, 14] – 18 – 20 ns Write Cycle [15] tWC Write cycle time 45 – 55 – ns tSCE CE LOW to write end 35 – 40 – ns tAW Address setup to write end 35 – 40 – ns tHA Address hold from write end 0 – 0 – ns tSA Address setup to write start 0 – 0 – ns tPWE WE pulse width 35 – 40 – ns tBW BHE / BLE pulse width 35 – 40 – ns tSD Data setup to write end 25 – 25 – ns tHD Data hold from write end 0 – 0 – ns tHZWE WE LOW to High Z [13, 14] – 18 – 20 ns tLZWE WE HIGH to Low Z [13] 10 – 10 – ns Notes 11. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH and 30-pF load capacitance. 12. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification. 13. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state. 15. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write. |
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