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BSO303PH Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSO303PH Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page BSO303P H Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1785 2678 pF Output capacitance C oss - 510 765 Reverse transfer capacitance C rss - 425 638 Turn-on delay time t d(on) -11 17 ns Rise time t r -13 20 Turn-off delay time t d(off) -55 83 Fall time t f -39 59 Gate Charge Characteristics 3) Gate to source charge Q gs --5 -6 nC Gate to drain charge Q gd - -14 -20 Gate charge total Q g - -36 -49 Gate plateau voltage V plateau - -2.7 - V Reverse Diode Diode continous forward current I S - - -2.2 A Diode direct current, pulsed I SM - - -32.8 Diode forward voltage V SD V GS=0 V, I F=-8.2 A, T j=25 °C - -0.9 -1.3 V Reverse recovery time t rr V R=-15 V, I F=|I S|, di F/dt =100 A/µs -24 36 ns Reverse recovery charge Q rr -13 19 nC T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-15 V, V GS=- 10 V, I D=-1 A, R G=6 Ω V DD=-24 V, I D=-8.2 A, V GS=0 to 10 V Rev. 1.3 page 3 2010-02-10 |
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