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BSS123 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BSS123
Description  SIPMOS Small-Signal-Transistor
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSS123 Datasheet(HTML) 3 Page - Infineon Technologies AG

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2010-05-12
Page 3
Rev. 1.41
BSS123
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=0.14A
0.09
0.19
-
S
Input capacitance
Ciss
VGS=0, VDS=25V,
f=1MHz
-
55
69
pF
Output capacitance
Coss
-
8.5
10.6
Reverse transfer capacitance
Crss
-
5
6.3
Turn-on delay time
td(on)
VDD=50V, VGS=10V,
ID=0.17A, RG=6Ω
-
2.7
4
ns
Rise time
tr
-
3.1
4.6
Turn-off delay time
td(off)
-
9.9
14.8
Fall time
tf
-
25
37
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=80V, ID=0.17A
-
0.055
0.082 nC
Gate to drain charge
Qgd
-
0.77
1.15
Gate charge total
Qg
VDD=80V, ID=0.17A,
VGS=0 to 10V
-
1.78
2.67
Gate plateau voltage
V(plateau) VDD=80V, ID = 0.17 A
-
2.6
-
V
Reverse Diode
Inverse diode continuous
forward current
IS
TA=25°C
-
-
0.17
A
Inv. diode direct current, pulsed ISM
-
-
0.68
Inverse diode forward voltage
VSD
VGS=0, IF = IS
-
0.81
1.2
V
Reverse recovery time
trr
VR=50V, IF=lS,
diF/dt=100A/µs
-
27.6
41.1
ns
Reverse recovery charge
Qrr
-
10.5
15.7
nC


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