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AT42QT1111-MU Datasheet(PDF) 38 Page - ATMEL Corporation |
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AT42QT1111-MU Datasheet(HTML) 38 Page - ATMEL Corporation |
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38 / 50 page  38 9571A–AT42–02/10 AT42QT1111-MU/AT42QT1111-AU 8. Specifications 8.1 Absolute Maximum Specifications 8.2 Recommended Operating Conditions 8.3 DC Specifications 8.4 Timing Specifications Vdd -0.5 to +6V Max continuous pin current, any control or drive pin ±10 mA Voltage forced onto any pin -1.0V to (Vdd + 0.5) Volts EEPROM setups maximum writes 100,000 write cycles CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum specification conditions for extended periods may affect device reliability Operating temperature -40°C to +°C Storage temperature -65°C to +150°C Vdd 1.8V to 5.5V Supply ripple + noise ±20 mV Cx transverse load capacitance per key 2 to 20 pF Vdd = 5.0V, Cs = 4.7 nF, Rs = 1 M , Ta = recommended range, unless otherwise noted Parameter Description Min Typ Max Units Notes Iddr Average supply current, running – – 12 at 5V 8 at 3V mA For typical values seeSection 8.8 Vil Low input logic level -0.5V – 0.3 Vdd V Vih High input logic level 0.6 Vdd Vdd Vdd + 0.5V V Vol Low output voltage 0 – 0.7 V 10 mA sink current Voh High output voltage 0.8 Vdd – Vdd V 10 mA source current Iil Input leakage current – <0.05 1 µA Rrst Internal RST pull-up resistor 30 – 60 k Parameter Description Min Typ Max Units Notes TBS Burst duration – 6 – ms 4.7 nF Cs/parallel acquisition Fc Burst center frequency – 40 – kHz Fm Burst modulation, percentage – 18 – % TPW Pulse width – 9000 – µs |
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