KTA1298 datasheet(1/2 Pages) HTSEMI

Part #	KTA1298

Description	TRANSISTOR (PNP)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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FEATURES

Low frequency power amplifier application

Power switching application

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-0.8

A

PC*

Collector Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=- 1mA,IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10mA, IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA, IC=0

-5

V

Collector

cut-off

current

ICBO

VCB=-30 V,IE=0

-0.1

μA

Emitter

cut-off

current

IEBO

VEB= -5V,IC=0

-0.1

μA

hFE(1)

VCE=-1V, IC=-100mA

100

320

DC

current

gain

hFE(2)

VCE=-1V, IC=-800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -20mA

-0.4

V

Base- emitter voltage

VBE

VCE=-1V, IC=-10mA

-0.5

-0.8

V

Transition

frequency

fT

VCE=-5V, IC=-10mA,

120

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0,f=1MHz

13

pF

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

100-200

160-320

MARKING

IO

IY

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

KTA1298

TRANSISTOR (PNP)

１　

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu

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