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DTS2012 Datasheet(PDF) 3 Page - DinTek Semiconductor Co,.Ltd |
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DTS2012 Datasheet(HTML) 3 Page - DinTek Semiconductor Co,.Ltd |
3 / 9 page ![]() 3 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Gate Current vs. Gate-to-Source Voltage Output Characteristics On-Resistance vs. Drain Current 0 10 20 30 40 0 3 6 9 12 15 18 V GS - Gate-Source Voltage (V) T J = 25 °C 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V DS - Drain-to-Source Voltage (V) V GS = 1.5 V V GS = 2.5 V V GS = 5 V thru 3 V V GS = 2 V 0 0.04 0.08 0.12 0.16 0 4 8 12 16 20 I D -Drain Current (A) V GS = 4.5 V V GS = 2.5 V V GS = 10 V Gate Current vs. Gate-to-Source Voltage Transfer Characteristics Gate Charge 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 0 3 6 9 12 15 18 V GS - Gate-to-Source Voltage (V) T J = 150 °C T J = 25 °C 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 2 4 6 8 10 0 2 4 6 8 10 Q g - Total Gate Charge (nC) V DS = 7.5 V V DS = 24 V I D = 4.7 A V DS = 15 V DTS2012 www.din-tek.jp |
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