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STM32F405XX Datasheet(PDF) 89 Page - STMicroelectronics |
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STM32F405XX Datasheet(HTML) 89 Page - STMicroelectronics |
89 / 185 page DocID022152 Rev 4 89/185 STM32F405xx, STM32F407xx Electrical characteristics Figure 28. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) Table 25. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions Typ Max(1) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.8 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBA T Backup domain supply current Backup SRAM ON, low-speed oscillator and RTC ON 1.29 1.42 1.68 6 11 µA Backup SRAM OFF, low-speed oscillator and RTC ON 0.62 0.73 0.96 3 5 Backup SRAM ON, RTC OFF 0.79 0.81 0.86 5 10 Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 2 4 1. Based on characterization, not tested in production. MS19990V1 0 0.5 1 1.5 2 2.5 3 3.5 0 102030405060708090 100 Temperature in (°C) 1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V |
Similar Part No. - STM32F405XX_13 |
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Similar Description - STM32F405XX_13 |
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