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FDD6530A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FDD6530A
Description  20V N-Channel PowerTrench MOSFET
Download  5 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6530A Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDD6530A Rev. C (W)
)
ON
(
DS
D
R
P
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse,
VDD = 10 V
55
mJ
IAR
Drain-Source Avalanche Current
8
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
15
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.4
0.9
1.2
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 8 A
VGS = 2.5 V,
ID = 6.6 A
VGS = 4.5 V, ID = 8 A, TJ = 125
°C
26
36
36
32
47
48
m
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 8 A
21
S
Dynamic Characteristics
Ciss
Input Capacitance
710
pF
Coss
Output Capacitance
173
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
84
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
7
14
ns
td(off)
Turn–Off Delay Time
18
32
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
4
8
ns
Qg
Total Gate Charge
6.5
9
nC
Qgs
Gate–Source Charge
1.3
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 8 A,
VGS = 4.5 V
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.7
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.7 A
(Note 2)
0.8
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in
2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
b) RθJA = 96°C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A


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