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FDS6612A Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDS6612A Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDS6612A Rev.C1 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) V = 10V GS 3.5V 3.0V 2.5V 6.0V 4.5V DS 4.0V 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 I , DRAIN CURRENT (A) V = 3.0V GS 3.5V 6.0V 4.5V D 10V 4.0V Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Dain Current and Gate Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 T , JUNCTION TEMPERATURE (°C) J V = 10 V GS I = 8.4 A D Figure 3. On-Resistance Variation with Temperature. 0 1 2 3 4 5 0 5 10 15 20 25 30 V , GATE TO SOURCE VOLTAGE (V) 25°C 125°C V = 5V DS T = -55°C A GS Figure 5. Transfer Characteristics. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 5 30 V , BODY DIODE FORWARD VOLTAGE (V) T = 125°C A 25°C -55°C V = 0V GS SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2 4 6 8 10 0 0.025 0.05 0.075 0.1 V , GATE TO SOURCE VOLTAGE (V) GS T = 25°C A I = 4 A D T = 125°C A Figure 4. On-Resistance Variation with Gate-to-Source Voltage. |
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