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JANS2N5151L Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANS2N5151L Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 T4-LDS-0132 Rev. 1 (091476) Page 1 of 4 DEVICES LEVELS 2N5151 2N5153 JAN 2N5151L 2N5153L JANTX 2N5151U3 2N5153U3 JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.5 Vdc Collector Current IC 2.0 Adc Total Power Dissipation 2N5151, 2N5153, L 2N5151, 2N5153, L 2N5151U3, 2N5153U3 2N5151U3, 2N5153U3 @ TA = +25°C (1) @ TC = +25°C (2) @ TA = +25°C (3) @ TC = +25°C (4) PT 1.0 10 1.16 100 W Operating & Storage Junction Temperature Range TJ , Tstg -65 to +200 °C Thermal Resistance, Junction-to Case RθJC 10 1.75 (U3) °C/W Note: 1) Derate linearly 5.7mW/°C for TA > +25° 2) Derate linearly 66.7mW/°C for TA > +25° 3) Derate linearly 6.63mW/°C for TA > +25° 4) Derate linearly 571mW/°C for TA > +25° ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 V(BR)CEO 80 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 IEBO 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 ICES 1.0 1.0 µAdc mAdc Collector-Base Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 µAdc TO-5 2N5151L, 2N5153L (See Figure 1) TO-39 (TO-205AD) 2N5151, 2N5153 U-3 2N5151U3, 2N5153U3 |
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