H5PS1G83JFR datasheet(4/62 Pages) HYNIX

Part #	H5PS1G83JFR

Description	1Gb DDR2 SDRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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4 / 62 page

Rev. 1.7 / Apr. 2012

4

H5PS1G83JFR Series

1.1 Device Features & Ordering Information

1.1.1 Key Features

• VDD = 1.8 +/- 0.1V

• VDDQ = 1.8 +/- 0.1V

• All inputs and outputs are compatible with SSTL_18 interface

•8 banks

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface

• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)

• Differential Data Strobe (DQS, DQS)

• Data outputs on DQS, DQS edges when read (edged DQ)

• Data inputs on DQS centers when write (centered DQ)

• On chip DLL align DQ, DQS and DQS transition with CK transition

• DM mask write data-in at the both rising and falling edges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising

edges of the clock

• Programmable CAS latency 3, 4, 5 and 6 supported

• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported

• Programmable burst length 4/8 with both nibble sequential and interleave mode

• Internal eight bank operations with single pulsed RAS

• Auto refresh and self refresh supported

• tRAS lockout supported

• 8K refresh cycles /64ms

• JEDEC standard 60ball FBGA(x8)

• Full strength driver option controlled by EMR

• On Die Termination supported

• Off Chip Driver Impedance Adjustment supported

• Self-Refresh High Temperature Entry

• Average Refresh Cycle (Tcase 0 oC~ 95 oC)

- 7.8 µs at 0oC ~ 85 oC

- 3.9 µs at 85oC ~ 95 oC

Commercial Temperature( 0oC ~ 85 oC)

Industrial Temperature( -40oC ~ 95 oC)

1. Description

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H5PS1G83JFR Datasheet(PDF) 4 Page - Hynix Semiconductor

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