H5PS5182GFRS6C datasheet(28/64 Pages) HYNIX

Part #	H5PS5182GFRS6C

Description	512Mb DDR2 SDRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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28 / 64 page

Rev.1.7 / Feb. 2013

28

H5PS5162GFR series

Specific Notes for dedicated AC parameters

1. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be

used for fast active power down exit timing. tXARDS is expected to be used for slow active power down exit

timing where a lower power value is defined by each vendor data sheet.

2. AL = Additive Latency

3. This is a minimum requirement. Minimum read to precharge timing is AL + BL/2 providing the tRTP and

tRAS(min) have been satisfied.

4. A minimum of two clocks (2 * tCK or 2 * nCK) is required irrespective of operating frequency

5. Timings are specified with command/address input slew rate of 1.0 V/ns. See System Derating for other

slew rate values.

6. Timings are guaranteed with DQs, DM, and DQS’s(DQS/RDQS in singled ended mode) input slew rate of

1.0 V/ns. See System Derating for other slew rate values.

7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals

with a differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1V/ns in single ended

mode. See System Derating for other slew rate values.

8. tDS and tDH derating

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

2 .0

1 25

4 5

1 2 5

45

+ 12 5

+ 4 5

-

---

--

-

1 .58 3

2 18 321

+ 8 3

+ 2 1

953 3

-

1.0

0

12

24

-

0.9

-

- 11

-1 4

-11

- 14

1

-2

13

10

25

2 2

-

0.8

-

-25

- 31

-1 3

-1 9

- 1

-7

1 1

5

23

1 7

-

0 .7

-

--

-

-3 1

-4 2

- 19

-1 9

- 7

-8

5

- 6

17

6

-

0.6

-

- 43

-5 9

-31

- 47

-19

-3 5

-7

-23

5

-11

0.5

-

-7 4

- 89

-6 2

-77

- 50

-65

- 3 8

-53

0 .4

-

---

--

-1 2 7

-1 40

- 11 5

-1 2 8

-1 03

- 11 6

0.8 V/n s

DQ

Sl e w

rat e

V/n s

D Q S , D Q S D iffer en ti al Sle w R a te

tD S , tD H De r at ing V alu e s fo r DD R 2 -4 00 , DD R2 -5 33 (A LL u n it s in 'p s' , Note 1 ap p lie s to e n ti r e T a ble)

1.6 V /n s

1. 4 V/n s

1. 2 V/n s

1.0 V/ n s

4.0 V/ n s

3.0 V/n s

2.0 V/n s

1.8 V /n s

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

△

tD S

△

tD H

2.0

1 00

45

100

45

100

45

-

1 .5

6 7216 7216 7

2 17 9

3 3

-

1 .0

0

1 2

2 4

-

--

-

0.9

-

- 5

-14

- 5

-1 4

7

-2

19

10

31

22

-

0.8

-

- 13

-3 1

- 1

-19

11

-7

23

5

35

1 7

-

0 .7

-

- 10

-4 22-3 0

14

-1 8

26- 638

6

-

0 .6

-

--

-

--

-

- 10

-5 9

2

-4 7

14

-3 5

26

- 23

3 8

- 11

0 .5

-

--

-

--

-

- 24

-8 9

-1 2

-7 7

0

- 65

1 2

- 53

0.4

-

-52

-1 40

-4 0

-128

-28

- 1 16

1.8 V/n s

0.8 V/n s

DQ

Slew

rat e

V/n s

DQS , D Q S D iff eren t ial Slew R a t e

tD S, t D H D e ra tin g Valu es fo r D D R 2 -667, D D R 2 -800( A L L u n it s in ' p s', N o t e 1 ap p lies to en t ire T a b le)

1.6 V/n s

1.4 V/n s

1 .2 V/n s

1.0 V/n s

4.0 V/n s

3.0 V/n s

2.0 V/n s

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H5PS5182GFRS6C Datasheet(PDF) 28 Page - Hynix Semiconductor

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