H5PS1G63JFRS6C datasheet(20/62 Pages) HYNIX

Part #	H5PS1G63JFRS6C

Description	1Gb DDR2 SDRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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20 / 62 page

Rev. 1.7 / Nov. 2011

20

Release

H5PS1G63JFR Series

4. Electrical Characteristics & AC Timing Specification

(TOPER; VDDQ = 1.8 +/- 0.1V; VDD = 1.8 +/- 0.1V)

Refresh Parameters by Device Density

Note:

1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be

executed.

2. This is an optional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.

DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin

Note:

1. 8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP

are the values for a single bank Precharge, which are shown in the table above.

2. Refer to Specific Notes 32.

3. Refer to Specific Notes 3.

Parameter

Symbol

256Mb 512Mb 1Gb

2Gb

4Gb Units Notes

Refresh to Active/Refresh

command time

tRFC

75

105

127.5

195

327.5

ns

1

Average periodic

refresh interval

tREFI

-40 ℃≤ TCASE ≤ 85

℃

7.8

us

1

85℃＜ TCASE ≤ 95

℃

3.9

us

1,2

Speed

DDR2-800

DDR2-667

DDR2-533

DDR2-400

Units Notes

Parameter

min

Bin(CL-tRCD-tRP)

5-5-5

6-6-6

4-4-4

5-5-5

4-4-4

3-3-3

CAS Latency

564

543

tCK

tRCD

12.5

15

12

15

ns

2

tRP*1

12.5

15

12

15

ns

2

tRAS

45

40

ns

2,3

tRC

57.5

60

57

60

55

ns

2

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H5PS1G63JFRS6C Datasheet(PDF) 20 Page - Hynix Semiconductor

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