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H5PS1G63JFRS6C Datasheet(PDF) 44 Page - Hynix Semiconductor |
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H5PS1G63JFRS6C Datasheet(HTML) 44 Page - Hynix Semiconductor |
44 / 62 page Rev. 1.7 / Nov 2011 44 Release H5PS1G63JFR Series For purposes of IDD testing, the following parameters are to be utilized Detailed IDD7 The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the specification. Legend: A = Active; RA = Read with Autoprecharge; D = Deselect IDD7: Operating Current: All Bank Interleave Read operation All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mA Timing Patterns for 8 bank devices x16 -DDR2-1066 all bins: A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D A4 RA4 D D D D A5 RA5 D D D D A6 RA6 D D D D A7 RA7 D D D D Speed Bin (CL-tRCD-tRP) DDR2-1066 Units 7-7-7 CL(IDD) 7 tCK tRCD(IDD) 13.125 ns tRC(IDD) 58.125 ns tRRD(IDD)-x16 10 ns tFAW-x16 45 ns tCK(IDD) 1.875 ns tRASmin(IDD) 45 ns tRASmax(IDD) 70000 ns tRP(IDD) 13.125 ns tRFC(IDD)-256Mb 75 ns tRFC(IDD)-512Mb 105 ns tRFC(IDD)-1Gb 127.5 ns |
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