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H5PS5162GFRS6C Datasheet(PDF) 4 Page - Hynix Semiconductor

Part # H5PS5162GFRS6C
Description  512Mb DDR2 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS5162GFRS6C Datasheet(HTML) 4 Page - Hynix Semiconductor

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Rev.1.7 / Feb. 2013
4
H5PS5162GFR series
1. Description
1.1 Device Features & Ordering Information
1.1.1 Key Features
• VDD ,VDDQ =1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write(centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 2, 3, 4, 5, 6 and 7 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4 / 8 with both nibble sequential and interleave mode
• Internal four bank operations with single pulsed RAS
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 84ball FBGA(x16) : 7.5mm x 12.5mm
• Full strength driver option controlled by EMRS
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Self-Refresh High Temperature Entry
• Partial Array Self Refresh support


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