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H5PS5162GFRS6C Datasheet(PDF) 45 Page - Hynix Semiconductor |
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H5PS5162GFRS6C Datasheet(HTML) 45 Page - Hynix Semiconductor |
45 / 64 page Rev.1.7 / Feb. 2013 45 H5PS5162GFR series For purposes of IDD testing, the following parameters are to be utilized Detailed IDD7 The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the specification. Legend: A = Active; RA = Read with Autoprecharge; D = Deselect IDD7: Operating Current: All Bank Interleave Read operation All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mA Timing Patterns for 4 bank devices x16 -DDR2-1066 7-7-7: A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D Speed Bin (CL-tRCD-tRP) DDR2-1066 Units 7-7-7 CL(IDD) 7 tCK tRCD(IDD) 13.125 ns tRC(IDD) 58.125 ns tRRD(IDD)-x16 10 ns tFAW-x16 45 ns tCK(IDD) 1.875 ns tRASmin(IDD) 45 ns tRASmax(IDD) 70000 ns tRP(IDD) 13.125 ns tRFC(IDD)-256Mb 75 ns tRFC(IDD)-512Mb 105 ns tRFC(IDD)-1Gb 127.5 ns |
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