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Q4X8E4 Datasheet(PDF) 5 Page - Littelfuse |
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Q4X8E4 Datasheet(HTML) 5 Page - Littelfuse |
5 / 10 page Data Sheets Triacs ©2004 Littelfuse, Inc. E2 - 5 http://www.littelfuse.com Thyristor Product Catalog +1 972-580-7777 Electrical Specification Notes (1) For either polarity of MT2 with reference to MT1 terminal (2) For either polarity of gate voltage (VGT) with reference to MT1 terminal (3) See Gate Characteristics and Definition of Quadrants. (4) See Figure E2.1 through Figure E2.7 for current rating at specific operating temperature. (5) See Figure E2.8 through Figure E2.10 for iT versus vT. (6) See Figure E2.12 for VGT versus TC. (7) See Figure E2.11 for IGT versus TC. (8) See Figure E2.14 for IH versus TC. (9) See Figure E2.13 for surge rating with specific durations. (10) See Figure E2.15 for tgt versus IGT. (11) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices, 400 mA dc for 15 A to 35 A devices (13) See Figure E2.1 through Figure E2.6 for maximum allowable case temperature at maximum rated current. (14) Pulse width ≤10 µs; IGT ≤ IGTM (15) RL = 60 Ω for 0.8 A to10 A triacs; RL = 30 Ω for 15 A to 35 A triacs (16) TC = TJ for test conditions in off state (17) IGT = 300 mA for 25 A and 35 A devices (18) Quadrants I, II, III only (19) Minimum non-trigger VGT at 125 °C is 0.2 V for all except 50 mA MAX QIV devices which are 0.2 V at 110 °C. Gate Characteristics Teccor triacs may be turned on between gate and MT1 terminals in the following ways: • In-phase signals (with standard AC line) using Quadrants I and III • Application of unipolar pulses (gate always positive or nega- tive), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses However, due to higher gate requirements for Quadrant IV, it is recommended that only negative pulses be applied. If pos- itive pulses are required, see “Sensitive Triacs” section of this catalog or contact the factory. Also, see Figure AN1002.8, “Amplified Gate” Thyristor Circuit. VTM VGT IH IGTM PGM PG(AV) ITSM dv/dt(c) dv/dt tgt I2t di/dt (1) (5) Volts (2) (6) (15) (18) (19) Volts (1) (8) (12) mAmps (14) Amps (14) Watts Watts (9) (13) Amps (1) (4) (13) Volts/µSec (1) Volts/ µSec (10) (17) µSec Amps2Sec Amps/µSec TC = 25 °C TC = 25 °C 60/50 Hz TC = 100 °C TC = 125 °C MAX MAX MAX TYP MIN TYP 1.6 2.5 35 1.8 20 0.5 120/100 2 150 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 150 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 100 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 75 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 50 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 350 225 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 350 225 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 300 200 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 250 175 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 150 3 60 70 1.6 2.5 70 2 20 0.5 200/167 4 400 275 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 400 275 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 350 225 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 300 200 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 200 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 400 275 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 400 275 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 350 225 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 300 200 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 200 4 166 100 1.4 2.75 50 2 20 0.5 250/220 5 550 475 3 260 100 1.4 2.75 50 2 20 0.5 250/220 5 450 400 3 260 100 1.5 2.75 50 2 20 0.5 350/300 5 550 475 3 508 100 1.5 2.75 50 2 20 0.5 350/300 5 450 400 3 508 100 |
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