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VND5E012MY-E Datasheet(PDF) 8 Page - STMicroelectronics |
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VND5E012MY-E Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 36 page Electrical specifications VND5E012MY-E 8/36 DocID16503 Rev 5 2.2 Thermal data VESD Electrostatic discharge (Human Body Model: R=1.5K Ω; C=100pF) –VCC, OUTPUT – INPUT, CS_DIS – CURRENT SENSE 5000 4000 2000 V VESD Charge device model (CDM-AEC-Q100-011) 750 V Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C Table 3. Absolute maximum rating (continued) Symbol Parameter Value Unit Table 4. Thermal data Symbol Parameter Maximum value Unit Rthj-case Thermal resistance junction-case (MAX) (with one channel ON) 2°C/W Rthj-amb Thermal resistance junction-ambient (MAX) See Figure 33 in the thermal section °C/W |
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