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STM8L151M8 Datasheet(PDF) 120 Page - STMicroelectronics |
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STM8L151M8 Datasheet(HTML) 120 Page - STMicroelectronics |
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120 / 134 page ![]() Electrical parameters STM8L15xx8, STM8L15xR6 120/134 DocID17943 Rev 6 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm IEC61967-2 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: human body model and charge device model. This test conforms to the JESD22-A114A/A115A standard. Static latch-up • LU: 3 complementary static tests are required on 10 parts to assess the latch-up performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. Table 59. EMI data (1) 1. Not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. Unit 16 MHz SEMI Peak level VDD = 3.6 V, TA = +25 °C, LQFP80 conforming to IEC61967-2 0.1 MHz to 30 MHz 10 dB μV 30 MHz to 130 MHz 4 130 MHz to 1 GHz 1 SAE EMI Level 1.5 - Table 60. ESD absolute maximum ratings Symbol Ratings Conditions Maximum value (1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) 750 |
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