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JANS2N2222A Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANS2N2222A Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 T4-LDS-0060 Rev. 2 (100247) Page 1 of 6 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 800 mAdc Total Power Dissipation @ TA = +25°C PT 0.5 W Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2221AUA 2N2221AUB, UBC 2N2222A, L 2N2222AUA 2N2222AUB, UBC RθJA 325 210 325 °C/W Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 50 Vdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 60Vdc ICBO 10 10 μAdc ηAdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 4.0Vdc IEBO 10 10 μAdc ηAdc Collector-Emitter Cutoff Current VCE = 50Vdc ICES 50 ηAdc TO-18 (TO-206AA) 2N2221A, 2N2222A 4 PIN 2N2221AUA, 2N2222AUA 3 PIN 2N2221AUB, 2N2222AUB 2N2221AUBC, 2N2222AUBC (UBC = Ceramic Lid Version) |
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