AT28HC64B

64K (8K x 8)

High Speed

CMOS

E

Page Write and

Software Data

Protection

Features

Internal Address and Data Latches for 64-Bytes

Page Write Cycle Time: 10 ms Maximum

1 to 64-Byte Page Write Operation

40 mA Active Current

100

µA CMOS Standby Current

Endurance: 100,000 Cycles

Data Retention: 10 Years

Note: PLCC package pins 1 and

17 are DON’T CONNECT.

PDIP, SOIC

Top View

PLCC

Top View

Pin Name

Function

A0 - A12

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

DC

Don’t Connect

Pin Configurations

TSOP

Top View

Description

The AT28HC64B is a high-performance electrically erasable and programmable read

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 55 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100

µA.

The AT28HC64B is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

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AT28HC64B

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