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FKI10531 Datasheet(PDF) 2 Page - Sanken electric

Part # FKI10531
Description  N ch Trench Power MOSFET
Download  6 Pages
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Manufacturer  SANKEN [Sanken electric]
Direct Link  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

FKI10531 Datasheet(HTML) 2 Page - Sanken electric

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FKI10531
FKI10531-DS Rev.1.2
SANKEN ELECTRIC CO.,LTD.
2
Jan. 24, 2014
Thermal Characteristics
Unless otherwise specified, T
A = 25 °C
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
(Junction to Case)
RθJC
3.9
°C/W
Thermal Resistance
(Junction to Ambient)
RθJA
62.5
°C/W
Electrical Characteristics
Unless otherwise specified, T
A = 25 °C
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain to Source Breakdown
Voltage
V(BR)DSS
ID = 100 μA, VGS = 0 V
100
V
Drain to Source Leakage Current
IDSS
VDS = 100 V, VGS = 0 V
100
µA
Gate to Source Leakage Current
IGSS
VGS = ± 20 V
± 100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 350 µA
1.0
2.0
2.5
V
Static Drain to Source
On-Resistance
RDS(ON)
ID = 11.9 A, VGS = 10 V
34.7
54.5
ID = 6.0 A, VGS = 4.5 V
36.5
56.5
Gate Resistance
RG
f = 1 MHz
2.3
Ω
Input Capacitance
Ciss
VDS = 25 V
VGS = 0 V
f = 1 MHz
1530
pF
Output Capacitance
Coss
125
Reverse Transfer Capacitance
Crss
51
Total Gate Charge (VGS = 10 V)
Qg1
VDS = 50 V
ID = 11.9 A
19.9
nC
Total Gate Charge (VGS = 4.5 V)
Qg2
9.0
Gate to Source Charge
Qgs
3.6
Gate to Drain Charge
Qgd
2.6
Turn-On Delay Time
td(on)
VDD = 50 V
ID = 11.9 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
3.0
ns
Rise Time
tr
2.8
Turn-Off Delay Time
td(off)
13.7
Fall Time
tf
6.0
Source to Drain Diode Forward
Voltage
VSD
IS = 11.9 A, VGS = 0 V
0.9
1.5
V
Source to Drain Diode Reverse
Recovery Time
trr
IF = 11.9 A
di/dt = 100 A/µs
Refer to Figure 3
40.7
ns
Source to Drain Diode Reverse
Recovery Charge
Q rr
68.2
nC


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