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2N4898 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N4898 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page ![]() Product Specification www.jmnic.com JMnic Silicon PNP Power Transistors 2N4898 2N4899 2N4900 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N4898 40 2N4899 60 VCEO(sus) Collector-emitter sustaining voltage 2N4900 IC=0.1A ;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A 1.3 V VBE Base-emitter on voltage IC=1A ; VCE=1V 1.3 V 2N4898 VCE=20V; IB=0 2N4899 VCE=30V; IB=0 ICEO Collector cut-off current 2N4900 VCE=40V; IB=0 0.5 mA ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=150℃ 0.1 1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=50mA ; VCE=1V 40 hFE-2 DC current gain IC=500mA ; VCE=1V 20 100 hFE-3 DC current gain IC=1.0A ; VCE=1V 10 COB Output capacitance IE=0;VCB=10V;f=1MHz 100 pF fT Transition frequency IC=250mA;VCE=10V 3.0 MHz |
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