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HA2-2625-5 Datasheet(PDF) 7 Page - Intersil Corporation |
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HA2-2625-5 Datasheet(HTML) 7 Page - Intersil Corporation |
7 / 10 page 7 Die Characteristics DIE DIMENSIONS: 69 mils x 56 mils x 19 mils 1750 µm x 1420µm x 483µm METALLIZATION: Type: Al, 1% Cu Thickness: 16k Å ±2kÅ SUBSTRATE POTENTIAL (POWERED UP): Unbiased PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12k Å ±2kÅ Nitride Thickness: 3.5k Å ±1.5kÅ TRANSISTOR COUNT: 140 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-2620, HA-2625 BAL -IN +IN V- BAL OUT V+ COMP HA-2620, HA-2625 |
Similar Part No. - HA2-2625-5 |
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Similar Description - HA2-2625-5 |
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