IRFZ44N datasheet(7/8 Pages) IRF

Part #	IRFZ44N

Description	Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

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Manufacturer	IRF [International Rectifier]

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IRFZ44N

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7

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

RG

VDD

• dv/dt controlled by R

G

• I

SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

*

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[

]

[

]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[

] ***

Fig 14. For N-channel HEXFET® power MOSFETs

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Manufacturer	Part #	Datasheet	Description
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IRFZ44N Datasheet(PDF) 7 Page - International Rectifier

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