LTC4357



4357fd

Design Example

The following design example demonstrates the calcula-

tions involved for selecting components in a 12V system

with 10A maximum load current (see Figure 4).

=

0.1V

10A

The Si4874DY offers a good solution, in an S8 package

The maximum power dissipation in the MOSFET is:

With less than 39µF of local bypass, the recommended RC

values of 100

Ω and 0.1µF were used in Figure 4.

ing is unnecessary.

applications inForMation

Figure 2. Reverse Recovery Produces Inductive Spikes at the IN and OUT Pin.

The Polarity of Step Recovery Spikes is Shown Across Parasitic Inductances

4357 F02

LTC4357

+

–

GND

IN

OUT

GATE

M1

REVERSE RECOVERY CURRENT

INPUT

SHORT

SBR1U-

150SA

INPUT PARASITIC

INDUCTANCE

10µF

SMAT70A

OR

+

–

OUTPUT PARASITIC

INDUCTANCE

4357 F03

LTC4357

GND

IN

OUT

GATE

M1

OUTPUT PARASITIC

INDUCTANCE

R1

100

C1

100nF

INPUT

SHORT

OR

Figure 4. 12V, 10A Diode-OR

4357 F04

LTC4357

GND

IN

OUT

GATE

M2

Si4874DY

12V

R1

100

C1

0.1µF

R1

100

C1

0.1µF

LTC4357

GND

IN

OUT

GATE

M1

Si4874DY

12V

TO LOAD