LTC4357



4357fd

Features

applications

Description

Positive High Voltage

Ideal Diode Controller

ler that drives an external N-channel MOSFET to replace a

Schottky diode. When used in diode-OR and high current

diodeapplications,theLTC4357reducespowerconsump-

tion, heat dissipation, voltage loss and PC board area.

The LTC4357 easily ORs power sources to increase total

system reliability. In diode-OR applications, the LTC4357

controls the forward voltage drop across the MOSFET to

ensure smooth current transfer from one path to the other

without oscillation. If the power source fails or is shorted,

a fast turn-off minimizes reverse current transients.

48V, 10A Diode-OR

n

Reduces Power Dissipation by Replacing a Power

Schottky Diode with an N-Channel MOSFET

n

0.5µs Turn-Off Time Limits Peak Fault Current

n

Wide Operating Voltage Range: 9V to 80V

n

Smooth Switchover without Oscillation

n

No Reverse DC Current

n

Available in 6-Lead (2mm

× 3mm) DFN and

8-Lead MSOP Packages

n

N + 1 Redundant Power Supplies

n

High Availability Systems

n

AdvancedTCA Systems

n

Telecom Infrastructure

n

Automotive Systems

4357 TA01

LTC4357

GND

IN

OUT

GATE

FDB3632

48V

LTC4357

GND

IN

OUT

GATE

FDB3632

48V

*SEE FIGURES 2 AND 3 FOR ADDITIONAL OPTIONAL COMPONENTS

Power Dissipation vs Load Current

typical application

CURRENT (A)

0

0

1

2

3

4

5

6

2

4

6

8

4357 TA01b

10

DIODE (MBR10100)

FET (FDB3632)

POWER

SAVED

L

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property of their respective owners.