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RF2480 Datasheet(PDF) 3 Page - RF Micro Devices |
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RF2480 Datasheet(HTML) 3 Page - RF Micro Devices |
3 / 8 page 3 of 8 RF2480 DS121024 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit Condition Min. Typ. Max. RF Output (~900MHz) LO=880MHz, -5dBm; SSB Maximum Output Power 0 +4 dBm I&Q Amplitude=2VPP High-Linearity Output Power -11 dBm I&Q Amplitude=0.325VPP Carrier Suppression 50 dB T=25°C; P OUT=-11 dBm (meets CDMA base station requirements); optimized I,Q DC offsets 35 dB Over Temperature (Temperature cycled from - 40°C to +85°C after optimization at T=25°C; P OUT=-11 dBm) Sideband Suppression 50 dB T=25°C; P OUT= -11 dBm; optimized I,Q DC off- sets 35 dB Over Temperature (Temperature cycled from - 40°C to +85°C after optimization at T=25°C; P OUT=-11 dBm) Output Impedance 13-j:25 Broadband Noise Floor -153.0 dBm/Hz At 20MHz offset, VCC=5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. RF Output (~2000MHz) LO=2000MHz, -5dBm; SSB Maximum Output Power -7 -3 dBm I&Q Amplitude=2VPP High-Linearity Output Power -17 dBm I&Q Amplitude=0.325VPP Carrier Suppression 50 dB T=25°C; P OUT= -17 dBm; optimized I,Q DC off- sets 35 dB Temperature cycled from -40°C to +85°C after optimization at T=25°C; P OUT=-17 dBm Sideband Suppression 50 dB T=25°C; P OUT= -17 dBm; optimized I,Q DC off- sets 40 dB Temperature cycled from -40°C to +85°C after optimization at T=25°C; P OUT=-17 dBm Output Impedance 58-j11 Broadband Noise Floor -158.0 dBm/Hz At 20MHz offset, VCC=5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. Power Down Turn On/Off Time 100 ns PD Input Resistance 50 k Power Control “ON” 2.8 V Threshold voltage Power Control “OFF” 1.0 1.2 V Threshold voltage Power Supply Voltage 5 V Specifications 4.5 6.0 V Operating Limits Current 50 mA Operating 25 APower Down |
Similar Part No. - RF2480_12 |
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Similar Description - RF2480_12 |
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