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RF2480 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RF2480
Description  DIRECT QUADRATURE MODULATOR
Download  8 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2480 Datasheet(HTML) 3 Page - RF Micro Devices

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RF2480
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
RF Output (~900MHz)
LO=880MHz, -5dBm; SSB
Maximum Output Power
0
+4
dBm
I&Q Amplitude=2VPP
High-Linearity Output Power
-11
dBm
I&Q Amplitude=0.325VPP
Carrier Suppression
50
dB
T=25°C; P
OUT=-11 dBm (meets CDMA base
station requirements); optimized I,Q DC offsets
35
dB
Over Temperature (Temperature cycled from -
40°C to +85°C after optimization at T=25°C;
P
OUT=-11 dBm)
Sideband Suppression
50
dB
T=25°C; P
OUT= -11 dBm; optimized I,Q DC off-
sets
35
dB
Over Temperature (Temperature cycled from -
40°C to +85°C after optimization at T=25°C;
P
OUT=-11 dBm)
Output Impedance
13-j:25
Broadband Noise Floor
-153.0
dBm/Hz
At 20MHz offset, VCC=5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
RF Output (~2000MHz)
LO=2000MHz, -5dBm; SSB
Maximum Output Power
-7
-3
dBm
I&Q Amplitude=2VPP
High-Linearity Output Power
-17
dBm
I&Q Amplitude=0.325VPP
Carrier Suppression
50
dB
T=25°C; P
OUT= -17 dBm; optimized I,Q DC off-
sets
35
dB
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; P
OUT=-17 dBm
Sideband Suppression
50
dB
T=25°C; P
OUT= -17 dBm; optimized I,Q DC off-
sets
40
dB
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; P
OUT=-17 dBm
Output Impedance
58-j11
Broadband Noise Floor
-158.0
dBm/Hz
At 20MHz offset, VCC=5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
Power Down
Turn On/Off Time
100
ns
PD Input Resistance
50
k
Power Control “ON”
2.8
V
Threshold voltage
Power Control “OFF”
1.0
1.2
V
Threshold voltage
Power Supply
Voltage
5
V
Specifications
4.5
6.0
V
Operating Limits
Current
50
mA
Operating
25
APower Down


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