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2SB1202 Datasheet(PDF) 2 Page - ON Semiconductor |
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2SB1202 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page 2SB1202/2SD1802 No.2113-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 1W Tc=25°C15 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1 μA DC Current Gain hFE1VCE=(--)2V, IC=(--)100mA 100* 560* hFE2VCE=(--)2V, IC=(--)3A 35 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 150 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (39)25 pF Collector to Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)100mA (--0.35)0.19 (--0.7)0.5 mV Base to Emitter Saturation Voltage VBE(sat) VCE=(--)2V, IC=(--)100mA (--)0.94 (--)1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V Collector to Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter to Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-On Time ton See specified Test Circuit. 70 ns Storage Time tstg (450)650 ns Fall Time tf 35 ns * : The 2SB1202/2SD1802 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SB1202S-E TP 500pcs./bag Pb Free 2SB1202T-E TP 500pcs./bag 2SD1802S-E TP 500pcs./bag 2SD1802T-E TP 500pcs./bag 2SB1202S-TL-E TP-FA 700pcs./reel 2SB1202T-TL-E TP-FA 700pcs./reel 2SD1802S-TL-E TP-FA 700pcs./reel 2SD1802T-TL-E TP-FA 700pcs./reel VR RB VCC=25V VBE= --5V + + 50Ω INPUT RL 25Ω OUTPUT 100μF 470μF PW=20μs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. |
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Similar Description - 2SB1202 |
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