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BSL211SP Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # BSL211SP
Description  OptiMOS -P Small-Signal-Transistor
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSL211SP Datasheet(HTML) 7 Page - Infineon Technologies AG

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2001-12-06
Page 7
Preliminary data
BSL211SP
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -4.7 A
VDD = -10 V, RGS = 25 Ω
25
50
75
100
°C
150
Tj
0
5
10
15
20
mJ
30
14 Typ. gate charge
|VGS| = f (QGate)
parameter: ID = -4.7 A pulsed
0
2
4
6
8
10
12
14
nC
18
|QGate|
0
1
2
3
4
5
6
7
8
9
10
V
12
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60
-20
20
60
100
°C
180
Tj
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5
BSL211SP


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