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BSL211SP Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSL211SP Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  2001-12-06 Page 1 Preliminary data BSL211SP OptiMOS -P Small-Signal-Transistor Product Summary VDS -20 V RDS(on) 67 m Ω ID -4.7 A Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated P-TSOP6-6 5 6 4 1 3 2 Gate pin 3 Drain pin 1,2, Source pin 4 5,6 Marking sPB Type Package Ordering Code BSL211SP P-TSOP6-6 Q67042-S4063 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -4.7 -3.8 A Pulsed drain current TA=25°C ID puls -18.8 Avalanche energy, single pulse ID=-4.7 A , VDD=-10V, RGS=25Ω EAS 26 mJ Reverse diode dv/dt IS=-4.7A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation TA=25°C Ptot 2 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 |
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Similar Description - BSL211SP |
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