BSL211SP datasheet(3/8 Pages) INFINEON

Part #	BSL211SP

Description	OptiMOS -P Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 8 page

2001-12-06

Page 3

Preliminary data

BSL211SP

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

çVDSç≥2*çIDç*RDS(on)max

ID=-3.8A

6.2

12.4

-

S

Input capacitance

Ciss

VGS=0, VDS=-15V,

f=1MHz

-

654

-

pF

Output capacitance

Coss

-

241

-

Reverse transfer capacitance

Crss

-

197

-

Turn-on delay time

td(on)

VDD=-10V, VGS=-4.5V,

ID=-1A, RG=6Ω

-

8.7

13

ns

Rise time

tr

-

13.9

21

Turn-off delay time

td(off)

-

25

37.3

Fall time

tf

-

23.3

35

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=-10V, ID=-4.7A

-

-1.3

-2

nC

Gate to drain charge

Qgd

-

-4.7

-7

Gate charge total

Qg

VDD=-10V, ID=-4.7A,

VGS=0 to -4.5V

-

-8.3

-12.4

Gate plateau voltage

V(plateau) VDD=-10V, ID=-4.7A

-

-2

-

V

Reverse Diode

Inverse diode continuous

forward current

IS

TA=25°C

-

-2

A

Inverse diode direct current,

pulsed

ISM

-

-18.8

Inverse diode forward voltage

VSD

VGS=0, |IF| = |ID|

-

-0.94

-1.4

V

Reverse recovery time

trr

VR=-10V, |IF| = |lD|,

diF/dt=100A/µs

-

20.6

25.8

ns

Reverse recovery charge

Qrr

-

6.3

7.9

nC

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