BSO052N03S datasheet(2/9 Pages) INFINEON

Part #	BSO052N03S

Description	OptiMOS2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSO052N03S

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - soldering point

R thJS

-

30

K/W

Thermal resistance,

junction - ambient

R thJA

minimal footprint,

t p≤10 s

-

110

minimal footprint,

steady state

-

150

6 cm

2 cooling area2),

t p≤10 s

--

50

6 cm

2 cooling area2),

steady state

--

80

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

30

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=70 µA

1.2

1.6

2

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=30 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=16 A

-

5.4

6.7

m

Ω

V GS=10 V, I D=17 A

-

4.3

5.2

Gate resistance

R G

-

1.2

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=17 A

32

63

-

S

Values

3) see figure 3

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)J-STD20 and JESD22

Rev. 1.11

page 2

2004-03-31

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